Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates

被引：2
|
作者：
Park, Jinsub [1 ]
Yao, Takafumi [2 ]
机构：
[1] Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea
[2] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 980855, Japan
来源：
MATERIALS RESEARCH BULLETIN | 2012年 / 47卷 / 10期
关键词：
Semiconductor; Thin films; Epitaxial growth; Atomic force microscopy;
D O I：
10.1016/j.materresbull.2012.04.044
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the fabrication and characterization of periodically polarity inverted (PPI) ZnO heterostructures on (0 0 0 1) Al2O3 substrates. For the periodically inverted array of ZnO polarity, CrN and Cr2O3 polarity selection buffer layers are used for the Zn- and O-polar ZnO films, respectively. The change of polarity and period in fabricated ZnO structures is evaluated by diffraction patterns and polarity sensitive piezo-response microscopy. Finally, PPI ZnO structures with subnanometer scale period are demonstrated by using holographic lithography and regrowth techniques. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2875 / 2878
页数：4
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