Electrical Characteristics and Microstructures of Pr6O11-doped Bi4Ti3O12 Ceramics

被引：0
作者：
Chen, M. [1 ]
Mei, X. A. [1 ]
Liu, R. F. [1 ]
Huang, C. Q. [1 ]
Liu, J. [1 ]
机构：
[1] Hunan Inst Sci & Technol, Sch Phys & Elect, Yueyang 414000, Peoples R China
来源：
HIGH-PERFORMANCE CERAMICS VII, PTS 1 AND 2 | 2012年 / 512-515卷
关键词：
Microstructure; Impedance; Electrical properties; Bismuth titanate; THIN-FILMS; BISMUTH TITANATE; CAPACITORS; MEMORIES;
D O I：
10.4028/www.scientific.net/KEM.512-515.1313
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical properties of Pr6O11-doped bismuth titanates (BixPryTi3O12,2, BPT) ceramics prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Pr-doped samples exhibit negative differential resistance behavior. The conducting filamentary model has been used to explain the negative differential resistance phenomenon in Pr-doped bismuth titanates. The impedance spectrum indicates that Pr-doped sample consists of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Pr-doped samples exhibit randomly oriented and plate-like morphology.
引用
收藏
页码：1313 / 1316
页数：4
相关论文
共 12 条
  • [1] Chen M, 2004, CHINESE PHYS LETT, V21, P1811, DOI 10.1088/0256-307X/21/9/038
  • [2] Fatigue-free samarium-modified bismuth titanate (Bi4-xSmxTi3O12) film capacitors having large spontaneous polarizations
    Chon, U
    Kim, KB
    Jang, HM
    Yi, GC
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (19) : 3137 - 3139
  • [3] FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES
    DEARAUJO, CAP
    CUCHIARO, JD
    MCMILLAN, LD
    SCOTT, MC
    SCOTT, JF
    [J]. NATURE, 1995, 374 (6523) : 627 - 629
  • [4] Synthesis and ferroelectric properties of c-axis oriented Bi4Ti3O12 thin films by sol-gel process on platinum coated silicon
    Gu, HS
    Kuang, AX
    Wang, SM
    Bao, DH
    Wang, LS
    Liu, JS
    Li, XJ
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (09) : 1209 - 1210
  • [5] Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition
    Kojima, T
    Sakai, T
    Watanabe, T
    Funakubo, H
    Saito, K
    Osada, M
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (15) : 2746 - 2748
  • [6] Orientation behavior and ferro- and piezoelectric properties of Bi4-xPrxTi3O12 polycrystalline films
    Matsuda, H
    Ito, S
    Iijima, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (9B): : 5977 - 5980
  • [7] Lanthanum-substituted bismuth titanate for use in non-volatile memories
    Park, BH
    Kang, BS
    Bu, SD
    Noh, TW
    Lee, J
    Jo, W
    [J]. NATURE, 1999, 401 (6754) : 682 - 684
  • [8] FERROELECTRIC MEMORIES
    SCOTT, JF
    DEARAUJO, CAP
    [J]. SCIENCE, 1989, 246 (4936) : 1400 - 1405
  • [9] Preparation of lanthanum doped Bi4Ti3O12 ceramics by the polymeric precursor method
    Simoes, A. Z.
    Quinelato, C.
    Ries, A.
    Stojanovic, B. D.
    Longo, E.
    Varela, J. A.
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 2006, 98 (2-3) : 481 - 485
  • [10] Properties of tungsten-doped Bi4Ti3O12-SrBi4Ti4O15 intergrowth ferroelectrics
    Wang, Wei
    Zhu, Jun
    Mao, Xiang-Yu
    Chen, Xiao-Bing
    [J]. MATERIALS RESEARCH BULLETIN, 2007, 42 (02) : 274 - 280
12