FORMATION AND PROPERTIES OF HETEROJUNCTIONS BASED ON THIN FILMS OF MAGNETIC OXIDES

被引：0
作者：
Vengalis, B. [1 ]
Oginskis, A. K. [1 ]
Lisauskas, V. [1 ]
Sliuziene, K. [1 ]
Grigaliunaite-Vonseviciene, G.
Cerniuke, I. [1 ]
Maneikis, A. [1 ]
机构：
[1] Ctr Phys Sc & Technol, Inst Semicond Phys, LT-01108 Vilnius, Lithuania
来源：
RADIATION INTERACTION WITH MATERIAL AND ITS USE IN TECHNOLOGIES 2012 | 2012年
关键词：
heterostructures; manganites; thin film growth; MANGANITES;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The heterostructures were prepared by growing thin films of manganites, La(2/3)A(1/3)MnO(3) (A=Ca, Sr, Ba), on Nb-doped SrTiO3 and n-Si substrates. They all demonstrated nonlinear current-voltage (I-U) characteristics with clearly defined rectifying behavior. Introducing of ultrathin interlaying YSZ and LaMnO3 layers were found to reduce shunting resistance and to improve electrical properties of the heterodiodes. The measured I-U relations have been modeled to elucidate dominating carrier transport mechanisms in the heterostructures and to define their possible use for applications.
引用
收藏
页码：61 / 64
页数：4
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