Components of Micro- and Nanoelectronics Based on Silicon Structures for Cryogenic Temperatures

被引：0

作者：

Druzhinin, Anatoly ^{[1
,2
]}

Ostrovskii, Igor ^{[1
,2
]}

Khoverko, Yuriy ^{[1
,2
]}

Yatsukhnenko, Serhii ^{[1
]}

Druzhinin, Anatoly ^{[1
,2
]}

Ostrovskii, Igor ^{[1
,2
]}

Khoverko, Yuriy ^{[1
,2
]}

机构：

[1] Lviv Polytech Natl Univ, Dept Semicond Elect, Lvov, Ukraine

[2] Int Lab High Magnet Fields & Low Temp, Wroclaw, Poland

来源：

2016 IEEE 36TH INTERNATIONAL CONFERENCE ON ELECTRONICS AND NANOTECHNOLOGY (ELNANO) | 2016年

关键词：

cryogenic temperatures; impedance spectroscopy; polysilicon; capacity; inductance; circuit; SOI STRUCTURES; ON-INSULATOR; POLYSILICON; SENSORS; LAYERS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper deals with the solution of scientific and applied problems of development of elements of sensing equipment on the basis of silicon-on-insulator structures (SOI) doped with boron impurities. The paper presents the impedance measurements of electrical properties of polycrystalline silicon films (with concentration ranged from 2.4x10(18) cm(-3) to 1.7x10(20)cm(-3)) in the silicon-on-insulator structures obtained in the temperature range 4,2-70K in the frequency range from 10Hz to 250kHz as well as checking a possibility of their use as components of solid state electronics efficient at cryogenic temperatures. Based on silicon-on-insulator structures the discrete solid state elements (inductive, capacitive elements) and combined elements (oscillatory circuits) implemented by positioning technologies were developed. To design the oscillatory circuit a combination of two elements consisting of SOI-structure with a dopant concentration corresponding to the dielectric and metal side of metal-insulator transition (obtaining by double diffusion of boron impurities in polysilicon) was used.

引用

页码：147 / 150

页数：4

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