GaN-based LEDs with Ar plasma treatment

被引：3
作者：
Kuo, D. S. [1 ,2 ]
Lam, K. T. [3 ]
Wen, K. H. [3 ]
Chang, S. J. [1 ,2 ]
Ko, T. K. [4 ]
Hon, S. J. [4 ]
机构：
[1] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Res Ctr Energy Technol & Strategy, Inst Microelect,Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Res Ctr Energy Technol & Strategy, Dept Elect Engn,Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[3] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
[4] Epistar Corp, Nitride Device Res & Dev Ctr, Tainan 744, Taiwan
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2012年 / 15卷 / 01期
关键词：
GaN; LED; Ar plasma treatment; Current spreading; NITRIDE-BASED LEDS; OUTPUT POWER; IMPROVEMENT; EFFICIENCY; LAYER;
D O I：
10.1016/j.mssp.2011.08.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors propose a simple Ar plasma treatment method to selectively damage the area underneath p-pad electrode of GaN-based light-emitting diodes (LEDs). It was found that we could form a highly resistive area so that the injected carriers will be forced to spread out horizontally for the. LED. Under 20 mA current injection, it was found that the output powers were 16.0, 17.9 and 17.3 mW while the forward voltages were 3.17, 3.19 and 3.20 V for conventional LED and LED with SiO2 layer, respectively. Moreover, the LED with Ar plasma treatment is superior to the other LEDs while operating at a higher injection current. (c) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：52 / 55
页数：4
相关论文
共 18 条
[1]   Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes [J].
Chang, S. J. ;
Shen, C. F. ;
Chen, W. S. ;
Ko, T. K. ;
Kuo, C. T. ;
Yu, K. H. ;
Shei, S. C. ;
Chiou, Y. Z. .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (06) :H175-H177
[2]   Nitride-based, LEDs with MQW active region's grown by different temperature profiles [J].
Chang, SJ ;
Wei, SC ;
Su, YK ;
Chuang, RW ;
Chen, SM ;
Li, WL .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (09) :1806-1808
[3]   Nitride-based flip-chip ITO LEDs [J].
Chang, SJ ;
Chang, CS ;
Su, YK ;
Lee, CT ;
Chen, WS ;
Shen, CF ;
Hsu, YP ;
Shei, SC ;
Lo, HM .
IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2005, 28 (02) :273-277
[4]   Nitride-based LEDs with 800 °C grown p-AllnGaN-GaN double-cap layers [J].
Chang, SJ ;
Wu, LW ;
Su, YK ;
Hsu, YP ;
Lai, WC ;
Tsai, JA ;
Sheu, JK ;
Lee, CT .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (06) :1447-1449
[5]   Highly reliable nitride-based LEDs with SPS plus ITO upper contacts [J].
Chang, SJ ;
Chang, CS ;
Su, YK ;
Chuang, RW ;
Lin, YC ;
Shei, SC ;
Lo, HM ;
Lin, HY ;
Ke, JC .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (11) :1439-1443
[6]   Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning [J].
Cuong, T. V. ;
Cheong, H. S. ;
Kim, H. G. ;
Kim, H. Y. ;
Hong, C. -H. ;
Suh, E. K. ;
Cho, H. K. ;
Kong, B. H. .
APPLIED PHYSICS LETTERS, 2007, 90 (13)
[7]   Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer [J].
Huh, C ;
Lee, JM ;
Kim, DJ ;
Park, SJ .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2248-2250
[8]   Spatial distribution of crown shaped light emission from a periodic inverted polygonal deflector embedded in an InGaN/GaN light emitting diode [J].
Kim, Hyung Gu ;
Cuong, Tran Viet ;
Jeong, Hyun ;
Woo, Seung Hee ;
Cha, Ok Hwan ;
Suh, Eun-Kyung ;
Hong, Chang-Hee ;
Cho, Hyung Koun ;
Kong, Bo Hyun ;
Jeong, Mun Seok .
APPLIED PHYSICS LETTERS, 2008, 92 (06)
[9]   Wavelength shift of gallium nitride light emitting diode with p-down structure [J].
Lan, WH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (06) :1217-1219
[10]   Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates [J].
Lee, Y. J. ;
Hwang, J. M. ;
Hsu, T. C. ;
Hsieh, M. H. ;
Jou, M. J. ;
Lee, B. J. ;
Lu, T. C. ;
Kuo, H. C. ;
Wang, S. C. .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (9-12) :1152-1154
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