Effect of measurement temperature on the dielectric and ferroelectric properties of various sol-gel derived PLZT thin films

被引:0
|
作者
McCarthy, F [1 ]
McCarthy, K [1 ]
Teowee, G [1 ]
Bukowski, T [1 ]
Alexander, T [1 ]
Uhlmann, DR [1 ]
机构
[1] UNIV ARIZONA,DEPT MAT SCI & ENGN,TUCSON,AZ 85721
关键词
sol-gel; ferroelectric films; dielectric; PLZT; temperature;
D O I
10.1080/10584589708012996
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Sol-gel derived PLZT, including PbTiO3, PbLaTiO3 28, PLZT 9/65/35 and PZT 53/47 films were prepared on platinized substrates. The dielectric and ferroelectric properties of the films were measured at 260K - 580K. The values of polarization, coercive field, dielectric constant and dissipation factor in these films typically increased with increasing temperature. The changes in dielectric properties of the films with temperature were not sharp unlike the transitions in single crystals or bulk ceramics. The pyroelectric coefficients, on the other hand, decreased monotonically with increasing temperature in all these films.
引用
收藏
页码:213 / 220
页数:8
相关论文
共 50 条
  • [41] Influence of processing parameters on characteristics of sol-gel derived PLZT thin films
    Malic, B
    Setter, N
    Brooks, K
    Kosec, M
    Drazic, G
    JOURNAL DE PHYSIQUE IV, 1998, 8 (P9): : 49 - 52
  • [42] SOL-GEL PROCESSING OF PLZT THIN-FILMS
    SEDLAR, M
    ZOU, L
    SAYER, M
    INTEGRATED FERROELECTRICS, 1995, 6 (1-4) : 129 - 140
  • [43] Diffuse phase transitions, electrical conduction, and low temperature dielectric properties of sol-gel derived ferroelectric barium titanate thin films
    Thomas, R
    Varadan, VK
    Komarneni, S
    Dube, DC
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (03) : 1480 - 1488
  • [44] Structural and dielectric properties of sol-gel derived PLZT (x/60/40)
    Shannigrahi, SR
    Choudhary, RNP
    JOURNAL OF ELECTROCERAMICS, 2000, 5 (03) : 201 - 209
  • [45] Structural and Dielectric Properties of Sol-Gel Derived PLZT (x/60/40)
    S.R. Shannigrahi
    R.N.P. Choudhary
    Journal of Electroceramics, 2000, 5 : 201 - 209
  • [46] Effect of Post-Metallization Annealing on the Ferroelectric Properties of Sol-Gel Derived PZT Thin Films
    Teowee, G.
    Boulton, J. M.
    Baertlein, C. D.
    Wade, R. K.
    Uhlmann, D. R.
    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 1994, 2 (1-3) : 623 - 626
  • [47] Optical and electro-optical properties of sol-gel derived ferroelectric thin films
    Teowee, G
    Boulton, JM
    Uhlmann, DR
    INTEGRATED FERROELECTRICS, 1998, 20 (1-4) : 39 - 54
  • [48] Sol-Gel Derived Ferroelectric Thin Films: Avenues for Control of Microstructural and Electric Properties
    K.A. Vorotilov
    M.I. Yanovskaya
    E.P. Turevskaya
    A.S. Sigov
    Journal of Sol-Gel Science and Technology, 1999, 16 : 109 - 118
  • [49] Sol-gel derived ferroelectric thin films: Avenues for control of microstructural and electric properties
    Vorotilov, KA
    Yanovskaya, MI
    Turevskaya, EP
    Sigov, AS
    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 1999, 16 (1-2) : 109 - 118
  • [50] Properties of Sol-Gel Derived Thin Organoalkylenesiloxane Films
    Nenashev, R. N.
    Vishnevskiy, A. S.
    Kotova, N. M.
    Vorotilov, K. A.
    INORGANIC MATERIALS, 2018, 54 (04) : 405 - 411