Use of neural network to characterize temperature effects on deposition rate of PECVD-silicon nitride thin films

被引:0
作者
Kim, Byungwhan [1 ]
Park, Jae Young
Hong, Sang Jeen
Han, Seung Soo
机构
[1] Sejong Univ, Dept Elect Engn, Seoul 143747, South Korea
[2] Kwangwoon Univ, Dept Elect Engn, Seoul 139701, South Korea
[3] Myongji Univ, Dept Elect Engn, Seoul 120728, South Korea
[4] Myongji Univ, Dept Informat Engn, Seoul 120728, South Korea
关键词
deposition rate; neural network; silicon nitride films;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Temperature effects on the deposition rate of silicon nitride films were characterized by building a neural network prediction model. The silicon nitride films were deposited by using a plasma enhanced chemical vapor deposition system and process parameter effects were systematically characterized by 2(6-1) fractional factorial experiment. The process parameters include a radio frequency power, pressure, temperature, SiH4, N-2, and NH3 flow rates. The prediction performance of generalized regression neural network (GRNN) was considerably improved by optimizing multi-valued training factors using a genetic algorithm (GA). Compared to the conventional model, GA-GRNN model demonstrated an improvement of more than 70 %. Several 3-D plots were generated to interpret temperature effects at various plasma conditions. It is noticeable that typical effects of SiH4 and NH3 flow rate were observed only at higher and lower temperatures, respectively. Depending on the levels of SiH4 (or higher NH3) flow rate, the temperature effects were quite different. Deposition mechanisms were qualitatively estimated.
引用
收藏
页码:S364 / S368
页数:5
相关论文
共 21 条
  • [1] Aleksandrov SE, 1996, RUSS J APPL CHEM+, V69, P1434
  • [2] Aleksandrov SE, 1996, RUSS J APPL CHEM+, V69, P1118
  • [3] [Anonymous], 1989, GENETIC ALGORITHM SE
  • [4] Silicon nitride films deposited at substrate temperatures <100°C in a permanent magnet electron cyclotron resonance plasma
    Doughty, C
    Knick, DC
    Bailey, JB
    Spencer, JE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (05): : 2612 - 2618
  • [5] Low temperature plasma deposition of silicon nitride from silane and nitrogen plasmas
    Hanyaloglu, BF
    Aydil, ES
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1998, 16 (05): : 2794 - 2803
  • [6] Kim B, 2005, J KOREAN PHYS SOC, V46, P1365
  • [7] Use of neural network to model the deposition rate of PECVD-silicon nitride films
    Kim, B
    Park, K
    Lee, D
    [J]. PLASMA SOURCES SCIENCE & TECHNOLOGY, 2005, 14 (01) : 83 - 88
  • [8] Kim B, 2005, J KOREAN PHYS SOC, V46, P460
  • [9] Kim B, 2004, J KOREAN PHYS SOC, V45, P404
  • [10] Modeling etch rate and uniformity of oxide via etching in a CHF3/CF4 plasma using neural networks
    Kim, B
    Kwon, KH
    Kwon, SK
    Park, JM
    Yoo, SW
    Park, KS
    You, IK
    Kim, BW
    [J]. THIN SOLID FILMS, 2003, 426 (1-2) : 8 - 15