Antiferromagnetic-ferromagnetic phase transition in (Zn,Sn,Mn)As2 epitaxial thin films

被引:6
作者
Hidaka, Shiro [1 ]
Toyota, Hideyuki [1 ]
Uchitomi, Naotaka [1 ]
机构
[1] Nagaoka Univ Technol, Dept Elect Engn, 1603-1 Kamitomioka Cho, Nagaoka, Niigata 9402188, Japan
关键词
ROOM-TEMPERATURE FERROMAGNETISM; ZNSNAS2; CHALCOPYRITE;
D O I
10.1063/1.4979555
中图分类号
O59 [应用物理学];
学科分类号
摘要
The magnetization of (Zn,Sn,Mn)As-2 thin films epitaxially grown on InP(001) substrates exhibited an anomalous temperature dependence, increasing slightly with temperature, compared with estimates based on the mean-field theory (MFT). Assuming that ferromagnetic (FM) and antiferromagnetic (AF) phases coexist at low temperature, these anomalous magnetic properties can be well explained by an AF-FM transition through a paramagnetic phase. The Neel temperature T-N of the AF phase is estimated from the threshold of the difference curve between the experimental and theoretical data, assuming the magnetization of the FM phase, which follows the MFT. The estimated T-N rapidly increases by similar to 50K in the range of Mn concentrations where the hexagonal MnAs (h-MnAs) phase precipitates. This can be explained by the superparamagnetic behavior of the precipitated h-MnAs nanoclusters, which possess a high blocking temperature. Published by AIP Publishing.
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页数:4
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