Active Voltage Controlled Switching of the Power GaN HEMT

This paper presents characteristics of the GaN HE and proposes active controlled switching of the GAN Power flEMT using closed-loop voltage feed-back control and a current mode gate-drive. An experimental implementation of the closed loop control strateq for Gait HEMT in a low inductance circuit is described. Simulation results and experimental switching results are presented and discussed. The paper gives full details of the circuits used. Controlled yet rapid dV/dt is obtained using closed loop Galva HEMT switching, The advantages of GaN HEMT devices arid their use in dosed loop switching circuits are discussed in light of the result and with regards to switching losses and EMI.