HfZrOx-Based Switchable Diode for Logic-in-Memory Applications

TiN/amorphous HfOx/ferroelectric-HfZrOx (HZO)/TiN was explored to accomplish switchable diode behavior with desirable memory characteristics in terms of high R-HRS/R-LRS ratio of similar to 2600 and retention up to ten years at 25 degrees C. The bias-controlled direction of the built-in diode was studied to be dominated by the polarization of HfZrOx while good retention can be achieved by stacking HfOx which is beneficial to suppress leakage current. More importantly, 16 Boolean functions can be realized in a single device which is easier to implement multiplier and adder. The prominent nonvolatile memory and computation performance make it a promising device for logic-in-memory (LiM) applications. Besides electrical properties, it well outperforms other LiM devices due to simple structure and fab-friendly materials, inspiring a new approach to capitalize on the salient features of ferroelectric HZO for LiM applications.