The formation of β-FeSi2 precipitates in microcrystalline Si

被引：3

作者：

Terukov, EI ^{[1
]}

Kon'kov, OI ^{[1
]}

Kudoyarova, VK ^{[1
]}

Gusev, OB ^{[1
]}

Davydov, VY ^{[1
]}

Mosina, GN ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2002年 / 36卷 / 11期

关键词：

D O I：

10.1134/1.1521222

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The formation of beta-FeSi2 precipitates was observed for the first time in microcrystalline Si films. The Fe-doped amorphous Si films (a-Si:Fe) were obtained using magnetron sputtering. Subsequent short-time thermal treatment led to the transition of amorphous Si to microcrystalline Si and to the formation of beta-FeSi2 precipitates. The samples synthesized emitted at the wavelength lambda approximate to 1.54 mum at 100 K. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：1235 / 1239

页数：5

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