22-Watts Power Amplifier Design Using GaN HEMT

被引：3
作者：
Shukla, Ambudhi [1 ]
Ray, K. P. [1 ]
机构：
[1] Def Inst Adv Technol, Dept Elect Engn, Pune, Maharashtra, India
来源：
2022 IEEE MICROWAVES, ANTENNAS, AND PROPAGATION CONFERENCE, MAPCON | 2022年
关键词：
RF amplifier; Load pull analysis; GaN; S-parameter; L-Band; Wide band gap; Matching network;
D O I：
10.1109/MAPCON56011.2022.10046859
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaN wide band gap semiconductor based devices has suitable material characteristics for higher power with higher frequency applications also. Which includes higher power densities, high breakdown voltages, high saturation velocity and mobility. Gallium Nitride (GaN) HEMT power amplifier (PA) accomplishing output power of 19.11-25.22 watts having frequency range of 1.18-1.88 GHz (47.13% fractional bandwidth) at center frequency 1.5 GHz is discussed in this paper. Presented amplifier module simulation results is providing maximum 58.64% power added efficiency and 59.95% drain efficiency at 27 dBm input power over the frequency range of 1.18-1.88 GHz at DC bias of VDS=32 V and VGS=-2.8 V. Devices based on GaN are a highly promising option for high power applications. Radar and L-band telecom applications both benefit greatly from this suggested PA.
引用
收藏
页码：1108 / 1113
页数：6
相关论文
共 16 条
  • [1] Bahl I., 2009, Fundamentals of RF and Microwave Transistor Amplifiers
  • [2] Design and development of (1.2-2.7) GHz GaN HEMT based broadband power amplifier
    Bansal, Kirti
    Chander, Subhash
    Gupta, Samuder
    Basu, Ananjan
    [J]. 2020 5TH INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS' 20), 2020, : 54 - 57
  • [3] Fano R. M., 1950, J FRANKLIN I, V249, P139, DOI [10.1016/0016-0032(50)90006-8, DOI 10.1016/0016-0032(50)90006-8, 10.1016/S0016-0032(50)91101-X, DOI 10.1016/S0016-0032(50)91101-X]
  • [4] Kassim S., 2010, INT ADV SYST ICIAS 2, P1
  • [5] AlGaN/GaN HEMTs - An overview of device operation and applications
    Mishra, UK
    Parikh, P
    Wu, YF
    [J]. PROCEEDINGS OF THE IEEE, 2002, 90 (06) : 1022 - 1031
  • [6] A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
    Pengelly, Raymond S.
    Wood, Simon M.
    Milligan, James W.
    Sheppard, Scott T.
    Pribble, William L.
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (06) : 1764 - 1783
  • [7] Pozar D. M., 2011, Microwave Engineering
  • [8] Radmanesh M. M., 2007, RF MICROWAVE DESIGN
  • [9] Sevic John., 2020, LOAD PULL METHOD RF
  • [10] Shrestha A., 2015, THESIS U ULM
12