The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

被引:263
作者
Knobloch, Theresia [1 ]
Illarionov, Yury Yu. [1 ,2 ]
Ducry, Fabian [3 ]
Schleich, Christian [4 ]
Wachter, Stefan [5 ]
Watanabe, Kenji [6 ]
Taniguchi, Takashi [7 ]
Mueller, Thomas [5 ]
Waltl, Michael [4 ]
Lanza, Mario [8 ]
Vexler, Mikhail I. [2 ]
Luisier, Mathieu [3 ]
Grasser, Tibor [1 ]
机构
[1] TU Wien, Inst Microelect, Vienna, Austria
[2] Ioffe Inst, St Petersburg, Russia
[3] Swiss Fed Inst Technol, Integrated Syst Lab, Zurich, Switzerland
[4] TU Wien, Inst Microelect, Christian Doppler Lab Single Defect Spect Semicon, Vienna, Austria
[5] TU Wien, Inst Photon, Vienna, Austria
[6] Natl Inst Mat Sci, Funct Mat Res Ctr, Res Ctr Funct Mat, Tsukuba, Ibaraki, Japan
[7] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki, Japan
[8] King Abdullah Univ Sci & Technol KAUST, Phys Sci & Engn Div, Thuwal, Saudi Arabia
基金
中国国家自然科学基金;
关键词
DER-WAALS HETEROSTRUCTURES; ELECTRONIC TRANSPORT; TUNNELING CURRENTS; GRAPHENE; MONOLAYER; TEMPERATURE; CONTACT; DEFECTS; HALL; MASS;
D O I
10.1038/s41928-020-00529-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Complementary metal-oxide-semiconductor (CMOS) logic circuits at their ultimate scaling limits place extreme demands on the properties of all materials involved. The requirements for semiconductors are well explored and could possibly be satisfied by a number of layered two-dimensional (2D) materials, such as transition metal dichalcogenides or black phosphorus. The requirements for gate insulators are arguably even more challenging. At present, hexagonal boron nitride (hBN) is the most common 2D insulator and is widely considered to be the most promising gate insulator in 2D material-based transistors. Here we assess the material parameters and performance limits of hBN. We compare experimental and theoretical tunnel currents through ultrathin layers (equivalent oxide thickness of less than 1 nm) of hBN and other 2D gate insulators, including the ideal case of defect-free hBN. Though its properties make hBN a candidate for many applications in 2D nanoelectronics, excessive leakage currents lead us to conclude that hBN is unlikely to be suitable for use as a gate insulator in ultrascaled CMOS devices. This Perspective assesses the performance limits of hexagonal boron nitride when used as a gate insulator in complementary metal-oxide-semiconductor (CMOS) devices based on two-dimensional materials, concluding that due to excessive leakage currents, the material is unlikely to be suitable for use in ultrascaled CMOS devices.
引用
收藏
页码:98 / 108
页数:11
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