High TC ferromagnetism of Zn(1-x)CoxO diluted magnetic semiconductors grown by oxygen plasma-assisted molecular beam epitaxy

被引：85
作者：
Liu, G. L. [1 ]
Cao, Q.
Deng, J. X.
Xing, P. F.
Tian, Y. F.
Chen, Y. X.
Yan, S. S.
Mei, L. M.
机构：
[1] Shandong Univ, Sch Phys & Microelect, Shandong 250100, Peoples R China
[2] Shandong Univ, Natl Key Lab Crystal Mat, Shandong 250100, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 05期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2437111
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Co-doped wurtzite ZnO [Zn(1-x)CoxO] thin films have been grown on Al2O3(0001) substrates by using oxygen plasma-assisted molecular beam epitaxy at the low growth temperature of 450 degrees C. The epitaxial films of Co concentration at 0 <= x <= 0.12 are single crystalline, which were examined by reflection high energy electron diffraction and x-ray diffraction. Both of optical transmission spectrum and in situ. x-ray photoelectron spectroscopy studies confirmed the incorporation of Co2+ cations into wurtzite ZnO lattice. Magnetic measurements revealed that the Zn(1-x)CoxO thin films are ferromagnetic with Curie temperature T-C above room temperature, and the ferromagnetism shows intrinsic characteristic.
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