False Surface-Trap Signatures Induced by Buffer Traps in AlGaN-GaN HEMTs

被引：8

作者：

Verzellesi, G. ^{[1
,2
]}

Faqir, M. ^{[1
,2
]}

Chini, A. ^{[1
,2
]}

Fantini, F. ^{[1
,2
]}

Meneghesso, G. ^{[3
]}

Zanoni, E. ^{[3
]}

Danesin, F. ^{[3
]}

Zanon, F. ^{[3
]}

Rampazzo, F. ^{[3
]}

Marino, F. A. ^{[3
]}

Cavallini, A. ^{[4
]}

Castaldini, A. ^{[4
]}

机构：

[1] Univ Modena & Reggio Emilia, DISMI, Modena, Italy

[2] Univ Modena & Reggio Emilia, DII, Modena, Italy

[3] Univ Padua, Dept Informat Engn, Padua, Italy

[4] Univ Bologna, Dept Phys, Bologna, Italy

来源：

2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 | 2009年

关键词：

Deep levels; Traps; DLTS; gate lag; GaN; HEMT;

D O I：

10.1109/IRPS.2009.5173339

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Buffer traps can induce "false" surface-trap signatures in AlGaN-GaN HEMTs, namely the same type of current-mode DLTS peaks and pulse responses that are generally attributed to surface traps. Device simulations are adopted to clarify the underlying physics. Being aware of the above phenomenon is important for both reliability testing and device optimization, as it can lead to erroneous identification of the degradation mechanism, thus resulting in inappropriate correction actions on the technological process.

引用

页码：732 / +

页数：2

共 3 条

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Fantini, F.
Danesin, F.
Rampazzo, F.
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Meneghesso, Gaudenzio
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Danesin, Francesca
Rampazzo, Fabiana
Zanon, Franco
Tazzoli, Augusto
Meneghini, Matteo
Zanoni, Enrico
[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (02) : 332 - 343

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