A cross sectional study on the crystallization of amorphous Ge2Sb2Te5 films induced by a single-pulse ultraviolet laser

被引：8
作者：
Zhu, Z. [1 ,2 ]
Liu, F. R. [1 ,2 ]
Yang, J. F. [1 ,2 ]
Fan, Z. K. [1 ,2 ]
Liu, F. [3 ]
Sun, N. X. [4 ]
机构：
[1] Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
[2] Beijing Univ Technol, Beijing Engn Res Ctr Appl Laser Technol, Beijing 100124, Peoples R China
[3] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Beijing, Peoples R China
[4] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
来源：
OPTICS AND LASER TECHNOLOGY | 2016年 / 81卷
基金：
中国国家自然科学基金;
关键词：
Ge2Sb2Te5; TEM; Finite element model; Crystallization; PHASE-TRANSITIONS; TEMPERATURE-FIELD; PICOSECOND LASER; THIN-FILMS; SIMULATION; NUCLEATION; GETE; TEM;
D O I：
10.1016/j.optlastec.2015.10.010
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper, the crystallization along the film thickness of amorphous Ge2Sb2Te5 (a-GST) films induced by a single-pulse ultraviolet laser was investigated by using transmission electron microscopy (TEM) integrated with SAED. TEM observations showed that the crystalline GST (c-GST) was composed of columnar grains at the top surface and equaixed grains inside the film. Moreover, the columnar grains became larger with the increase of laser fluence. A three-dimensional finite element method simulation was further used to elucidate the temperature field by a nanosecond excimer laser in the cross section of the a-GST film. A big temperature gradient obtained at the top surface in the cooling process caused the formation of columnar grains, while columnar grains were gradually substituted by small equaixed grains with the decrease of temperature gradient downwards the film interior. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：100 / 106
页数：7
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