A cross sectional study on the crystallization of amorphous Ge2Sb2Te5 films induced by a single-pulse ultraviolet laser

被引：8
作者：
Zhu, Z. [1 ,2 ]
Liu, F. R. [1 ,2 ]
Yang, J. F. [1 ,2 ]
Fan, Z. K. [1 ,2 ]
Liu, F. [3 ]
Sun, N. X. [4 ]
机构：
[1] Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
[2] Beijing Univ Technol, Beijing Engn Res Ctr Appl Laser Technol, Beijing 100124, Peoples R China
[3] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Beijing, Peoples R China
[4] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
来源：
OPTICS AND LASER TECHNOLOGY | 2016年 / 81卷
基金：
中国国家自然科学基金;
关键词：
Ge2Sb2Te5; TEM; Finite element model; Crystallization; PHASE-TRANSITIONS; TEMPERATURE-FIELD; PICOSECOND LASER; THIN-FILMS; SIMULATION; NUCLEATION; GETE; TEM;
D O I：
10.1016/j.optlastec.2015.10.010
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper, the crystallization along the film thickness of amorphous Ge2Sb2Te5 (a-GST) films induced by a single-pulse ultraviolet laser was investigated by using transmission electron microscopy (TEM) integrated with SAED. TEM observations showed that the crystalline GST (c-GST) was composed of columnar grains at the top surface and equaixed grains inside the film. Moreover, the columnar grains became larger with the increase of laser fluence. A three-dimensional finite element method simulation was further used to elucidate the temperature field by a nanosecond excimer laser in the cross section of the a-GST film. A big temperature gradient obtained at the top surface in the cooling process caused the formation of columnar grains, while columnar grains were gradually substituted by small equaixed grains with the decrease of temperature gradient downwards the film interior. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：100 / 106
页数：7
相关论文
共 30 条
[1]   Ultrafast laser-induced phase transitions in amorphous GeSb firms [J].
Callan, JP ;
Kim, AMT ;
Roeser, CAD ;
Mazur, E ;
Solis, J ;
Siegel, J ;
Afonso, CN ;
de Sande, JCG .
PHYSICAL REVIEW LETTERS, 2001, 86 (16) :3650-3653
[2]   LASER-INDUCED CRYSTALLIZATION PHENOMENA IN GETE-BASED ALLOYS .1. CHARACTERIZATION OF NUCLEATION AND GROWTH [J].
COOMBS, JH ;
JONGENELIS, APJM ;
VANESSPIEKMAN, W ;
JACOBS, BAJ .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (08) :4906-4917
[3]   TEM Study on Volume Changes and Void Formation in Ge2Sb2Te5 Films, with Repeated Phase Changes [J].
Do, Kihoon ;
Lee, Dokyu ;
Ko, Dae-Hong ;
Sohn, Hyunchul ;
Cho, Mann-Ho .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (08) :H284-H286
[4]   Simulation of the columnar-to-equiaxed transition in directionally solidified Al-Cu alloys [J].
Dong, HB ;
Lee, PD .
ACTA MATERIALIA, 2005, 53 (03) :659-668
[5]   Morphology and structure of laser-modified Ge2Sb2Te5 films studied by transmission electron microscopy [J].
Friedrich, I ;
Weidenhof, V ;
Lenk, S ;
Wuttig, M .
THIN SOLID FILMS, 2001, 389 (1-2) :239-244
[6]   LASER-INDUCED CRYSTALLIZATION OF AMORPHOUS GETE - A TIME-RESOLVED STUDY [J].
HUBER, E ;
MARINERO, EE .
PHYSICAL REVIEW B, 1987, 36 (03) :1595-1604
[7]   Crystallization behavior of sputter-deposited amorphous Ge2Sb2Te5 thin films [J].
Jeong, TH ;
Kim, MR ;
Seo, H ;
Kim, SJ ;
Kim, SY .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) :774-778
[8]   Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloys [J].
Kalb, J ;
Spaepen, F ;
Wuttig, M .
APPLIED PHYSICS LETTERS, 2004, 84 (25) :5240-5242
[9]   One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15 μm) [J].
Kang, DH ;
Ahn, DH ;
Kim, KB ;
Webb, JF ;
Yi, KW .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) :3536-3542
[10]   Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices [J].
Kim, Cheolkyu ;
Kang, Dongmin ;
Lee, Tae-Yon ;
Kim, Kijoon H. P. ;
Kang, Youn-Seon ;
Lee, Junho ;
Nam, Sung-Wook ;
Kim, Ki-Bum ;
Khang, Yoonho .
APPLIED PHYSICS LETTERS, 2009, 94 (19)
123