Efficient switching of Rashba spin splitting in wide modulation-doped quantum wells

被引：17

作者：

Gvozdic, D. M.

Ekenberg, U. ^{[1
]}

机构：

[1] Royal Inst Technol, Sch Informat & Commun Technol, SE-16440 Kista, Sweden

[2] Univ Belgrade, Fac Elect Engn, Belgrade 11120, Serbia

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 05期

关键词：

Semiconductor quantum wells;

D O I：

10.1063/1.2437132

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors demonstrate that the size of the electric-field-induced Rashba spin splitting in an 80 nm wide modulation-doped InGaSb quantum well can depend strongly on the spatial variation of the electric field. In a slightly asymmetric quantum well it can be an order of magnitude stronger than for the average uniform electric field. For even smaller asymmetry spin subbands can have wave functions and/or expectation values of the spin direction that are completely changed as the in-plane wave vector varies. The Dresselhaus effect [Phys. Rev. 100, 580 (1955)] can give an anticrossing at which the spin rapidly flips.

引用

页数：3

共 9 条

[1] OSCILLATORY EFFECTS AND THE MAGNETIC-SUSCEPTIBILITY OF CARRIERS IN INVERSION-LAYERS [J].