Self-aligned nanolenses with multilayered Ge/SiO2 core/shell structures on Si (001)

被引:6
作者
Chen, Huai-Chung [1 ]
Lee, Sheng-Wei [1 ]
Chen, Lih-Juann [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
关键词
D O I
10.1002/adma.200600307
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Selective etching of multilayered Ge-quantum-dot/Si-spacer has been used to fabricate stacked Ge@SiO2 nanolenses with the ability to filter and focus 1.5 mu m light. These lenses have potential for use as Si-compatible photodetector materials for telecommunications. The left figure is a schematic sketch of the nanolenses and the right figure is a transmission electron microscopy image of the lenses.
引用
收藏
页码:222 / +
页数:6
相关论文
共 50 条
[21]   Photoluminescence from SiO2/Si/SiO2 structures [J].
Photopoulos, P ;
Nassiopoulou, AG .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (21) :3641-3650
[22]   Contacting of Si/SiO2 core/shell nanowires using laser photolithography [J].
Benyettou, F. ;
Aissat, A. ;
Benamar, M. E. A. ;
Berbezier, I. .
INTERNATIONAL CONFERENCE ON TECHNOLOGIES AND MATERIALS FOR RENEWABLE ENERGY, ENVIRONMENT AND SUSTAINABILITY, TMREES17, 2017, 119 :131-138
[23]   Epitaxial growth of C54 TiSi2 on Si(001) by self-aligned process [J].
Wang, LM ;
Wu, ST .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (02) :638-642
[24]   Epitaxial growth of C54 TiSi2 on Si(001) by self-aligned process [J].
Wang, Li-Ming ;
Wu, Shinn-Tyan .
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (02) :638-642
[25]   Photovoltaic Effect in Ultra-Thin a-Si/SiO2 Multilayered Structures [J].
Shatveryan, A. A. ;
Anopchenko, A. ;
Hossain, S. M. ;
Marconi, A. ;
Wang, M. ;
Pucker, G. ;
Bellutti, P. ;
Pavesi, L. .
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, 2008, :390-392
[26]   Investigating wet chemical oxidation methods to form SiO2 interlayers for self-aligned Pt-HfO2-Si gate stacks [J].
Brummer, Amy C. ;
Kurup, Siddharth ;
Aziz, Daniel ;
Filler, Michael A. ;
Vogel, Eric M. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2023, 41 (05)
[27]   Theory of Si 2p core-level shifts at the Si(001)-SiO2 interface [J].
Pasquarello, A. ;
Hybertsen, M. S. ;
Car, R. .
Physical Review B: Condensed Matter, 53 (16)
[28]   Theory of Si 2p core-level shifts at the Si(001)-SiO2 interface [J].
Pasquarello, A ;
Hybertsen, MS ;
Car, R .
PHYSICAL REVIEW B, 1996, 53 (16) :10942-10950
[29]   Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires [J].
Ogata, K. ;
Sutter, E. ;
Zhu, X. ;
Hofmann, S. .
NANOTECHNOLOGY, 2011, 22 (36)
[30]   Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells [J].
Young, David L. ;
Theingi, San ;
LaSalvia, Vincenzo ;
Chen, Kejun ;
Nemeth, William ;
Findley, Dawn ;
Page, Matthew ;
Stradins, Pauls .
2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2019, :2211-2214