Structure and chemistry of SiOx (x < 2) systems

被引：22
作者：
Barranco, A
Yubero, F
Espinos, JP
Holgado, JP
Caballero, A
Gonzalez-Elipe, AR
Mejias, JA
机构：
[1] Univ Seville, CSIC, Inst Ciencia Mat Sevilla, Seville 41092, Spain
[2] Univ Pablo Olavide, Fac Ciencias Expt, Seville 41013, Spain
来源：
VACUUM | 2002年 / 67卷 / 3-4期
关键词：
D O I：
10.1016/S0042-207X(02)00218-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structure of SiOx materials and the chemical stability of Sin+ (n < 4) species have been investigated experimentally by photoemission and X-ray absorption spectroscopy. SiOx thin films and interface systems formed by small amounts of SiOx deposited on different substrates (Cu(1 0 0), TiO2(1 1 0), Al) have been studied. Theoretical analysis based on quantum mechanical calculations and cluster models have permitted to account for the stability of the different Sin+ chemical states and for some disproportionation reactions observed under certain experimental conditions. (C) 2002 Elsevier Science Ltd. All rights reserved.
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收藏
页码：491 / 499
页数：9
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