Electrical Degradation Behavior of a-InGaZnO Thin-Film Transistors with Sm2O3 Gate Dielectrics

被引：0

作者：

Chen, Fa-Hsyang ^{[1
]}

Liu, Jian-Hung ^{[1
]}

Mondal, Somnath ^{[1
]}

Wu, Bang-Li ^{[1
]}

Pan, Tung-Ming ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan

来源：

IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2 | 2012年 / 19卷

关键词：

a-InGaZnO; TFT; Sm2O3; reliability;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the electrical degradation behavior in amorphous-lnGaZnO (a-IGZO) thin-film transistors (TFTs) with Sm2O3 gate dielectrics. The negative shift of threshold voltage in Sm2O3 a-IGZO TFTs can be attributed to the generation of extra electrons from oxygen vacancies in the a-IGZO channel.

引用

页码：899 / 900

页数：2

共 6 条

[1] Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress
Ghaffarzadeh, Khashayar
Nathan, Arokia
Robertson, John
Kim, Sangwook
Jeon, Sanghun
Kim, Changjung
Chung, U-In
Lee, Je-Hun
[J]. APPLIED PHYSICS LETTERS, 2010, 97 (11)
[2] The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide-semiconductor field effect transistors with ZrO2 and Sm2O3 gate dielectrics
Ho, Hsiao-Shuo
Chang, Ingram Yin-Ku
Lee, Joseph Ya-Min
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (17)
[3] Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display
Kwon, Jang Yeon
Son, Kyoung Seok
Jung, Ji Sim
Kim, Tae Sang
Ryu, Myung Kwan
Park, Kyung Bae
Yoo, Byung Wook
Kim, Jung Woo
Lee, Young Gu
Park, Kee Chan
Lee, Sang Yoon
Kim, Jong Min
[J]. IEEE ELECTRON DEVICE LETTERS, 2008, 29 (12) : 1309 - 1311
[4] Hot carrier analysis in low-temperature poly-Si TFTs using picosecond emission microscope
Uraoka, Y
Hirai, N
Yano, H
Hatayama, T
Fuyuki, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (01) : 28 - 35
[5] X-RAY PHOTOELECTRON-SPECTROSCOPY OF RARE-EARTH COMPOUNDS
UWAMINO, Y
ISHIZUKA, T
YAMATERA, H
[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1984, 34 (01) : 67 - 78
[6] Zhao Y, 2006, APPL PHYS LETT, V89

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