Glass transition kinetics and thermal stability of Se82-xTe18Sbx (x=0, 4, 8 and 12 at %) glassy alloys

被引：16

作者：

Rao, Vandita ^{[1
]}

Dwivedi, D. K. ^{[1
]}

机构：

[1] Madan Mohan Malaviya Univ Technol, Dept Appl Sci, Amorphous Semicond Res Lab, Gorakhpur 273010, Uttar Pradesh, India

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 08期

关键词：

PHASE-CHANGE MATERIALS; SE-75-XTE25SBX THIN-FILMS; OPTICAL BAND-GAP; CRYSTALLIZATION KINETICS; FORMING ABILITY; TEMPERATURE; DEPENDENCE;

D O I：

10.1007/s10854-016-6300-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Glass transition kinetics of Se82-xTe18Sbx (x = 0, 4, 8 and 12 at.%) glassy alloys has been studied using differential scanning calorimetry (DSC). DSC runs were taken at different heating rates (5, 10, 15 and 20 K/min) for each samples. Heating rate dependence of glass transition temperature (T-g) has been studied using Lasocka empirical relation. Activation energy of glass transition (E-g) has been determined using Kissinger and Moynihan's relation. Effect of Sb concentration on glass transition temperature and activation energy has been studied. Thermal stability of Se82 - xTe18Sbx glassy alloys has also been investigated using Dietzal relation, Saad and Poulin relation, Hurby parameter (H-r) and Lie and Liu parameter (gamma). Compositional dependence of parameters investigated for thermal stability has also been studied.

引用

页码：6208 / 6216

页数：9

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