Glass transition kinetics and thermal stability of Se82-xTe18Sbx (x=0, 4, 8 and 12 at %) glassy alloys

被引：16
|
作者：
Rao, Vandita [1 ]
Dwivedi, D. K. [1 ]
机构：
[1] Madan Mohan Malaviya Univ Technol, Dept Appl Sci, Amorphous Semicond Res Lab, Gorakhpur 273010, Uttar Pradesh, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 08期
关键词：
PHASE-CHANGE MATERIALS; SE-75-XTE25SBX THIN-FILMS; OPTICAL BAND-GAP; CRYSTALLIZATION KINETICS; FORMING ABILITY; TEMPERATURE; DEPENDENCE;
D O I：
10.1007/s10854-016-6300-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Glass transition kinetics of Se82-xTe18Sbx (x = 0, 4, 8 and 12 at.%) glassy alloys has been studied using differential scanning calorimetry (DSC). DSC runs were taken at different heating rates (5, 10, 15 and 20 K/min) for each samples. Heating rate dependence of glass transition temperature (T-g) has been studied using Lasocka empirical relation. Activation energy of glass transition (E-g) has been determined using Kissinger and Moynihan's relation. Effect of Sb concentration on glass transition temperature and activation energy has been studied. Thermal stability of Se82 - xTe18Sbx glassy alloys has also been investigated using Dietzal relation, Saad and Poulin relation, Hurby parameter (H-r) and Lie and Liu parameter (gamma). Compositional dependence of parameters investigated for thermal stability has also been studied.
引用
收藏
页码：6208 / 6216
页数：9
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