Influence of oxygen partial pressure in In-Sn-Ga-O thin-film transistors at a low temperature

被引：32
作者：
Oh, Changyong [1 ]
Jang, Hyunjae [1 ]
Kim, Hyeong Wook [1 ]
Jung, Hyunjae [1 ]
Park, Hyungryul [2 ]
Cho, Johann [2 ]
Kim, Bo Sung [1 ]
机构：
[1] Korea Univ, Dept Appl Phys, Sejong 30019, South Korea
[2] Samsung Corning Adv Glass, R&D Grp, Gumi 730735, South Korea
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2019年 / 805卷
关键词：
In-Sn-Ga-O (ITGO); Thin-film transistor (TFT); Oxygen partial pressure; Low temperature; Sputtering; AMORPHOUS OXIDE SEMICONDUCTOR; CARRIER TRANSPORT; HIGH-PERFORMANCE;
D O I：
10.1016/j.jallcom.2019.07.091
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We examined the electrical properties of low-temperature-processed top-gate In-Sn-Ga-O (ITGO) thin-film transistors (TFTs) by rf/dc-sputtering with different oxygen partial pressures (PO2). As PO2 changed from 0 to 50.0%, the ITGO TFT showed various electrical characteristics such as from conductor-like behavior to transfer curves with positive-shifted threshold voltages (Vth). The TFT at PO2 of 25.0% afforded the best performance, exhibiting field-effect mobility of 14.8 cm(2)V(-1)s(-1), Vth of 0.56 V, and subthreshold slope of 0.16 Vdec(-1) with reasonable electrical stability for gate bias stress. From various analysis techniques, we found that the TFT characteristics and the electrical stability strongly depended on the metal-oxygen surface states of the ITGO films influenced by PO2 during the sputtering process. (C) 2019 Elsevier B.V. All rights reserved.
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收藏
页码：211 / 217
页数：7
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