Pulsed magnetic field study of the spin gap in intermediate valence compound SmB6

被引：7

作者：

Flachbart, K. ^{[1
]}

Bartkowiak, M. ^{[2
]}

Demishev, S. ^{[3
]}

Gabani, S. ^{[1
]}

Glushkov, V. ^{[3
]}

Herrmannsdorfer, T. ^{[2
]}

Moshchalkov, V. ^{[4
]}

Shitsevalova, N. ^{[5
]}

Sluchanko, N. ^{[3
]}

机构：

[1] SAS, Inst Expt Phys, SK-04001 Kosice, Slovakia

[2] FZD, Hochfeld Magnetlab, D-01314 Dresden, Germany

[3] RAS, Inst Gen Phys, RU-119991 Moscow, Russia

[4] Katholieke Univ Leuven, B-3001 Louvain, Belgium

[5] NASU, Inst Problems Mat Sci, UA-252680 Kiev, Ukraine

来源：

PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 19期

关键词：

MAGNETORESISTANCE; STATE;

D O I：

10.1016/j.physb.2009.07.017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work, we report the behavior of electrical resistivity of SmB6 at temperatures between 2.2 and 70 K in pulsed magnetic fields up to 54 T. A strong negative magnetoresistance was detected with increasing magnetic field, when lowering the temperature in the range T < 30K. We show that the amplitude of negative magnetoresistance reaches its maximum dR/R similar to 70% at B = 54 T, in the vicinity of phase transition occurring in this strongly correlated electron system at T-c similar to 5 K. The crossover from negative magnetoresistance to positive magnetoresistance found at intermediate temperatures at T>30K is discussed within the framework of exciton-polaron model of local charge fluctuations in SmB6 proposed by Kikoin and Mishchenko. It seems that these exciton-polaron in-gap states are influenced both by temperature and magnetic field. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2985 / 2987

页数：3

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