Growth of atomically flat thin films of the electronically phase-separated manganite (La0.5Pr0.5)0.67Ca0.33MnO3

被引：6

作者：

Jeen, Hyoungjeen ^{[1
,2
]}

Javed, Rafiya ^{[1
]}

Biswas, Amlan ^{[1
]}

机构：

[1] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

[2] Pusan Natl Univ, Dept Phys, Busan 609735, South Korea

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2016年 / 122卷 / 01期

基金：

美国国家科学基金会;

关键词：

PULSED-LASER DEPOSITION; GIANT MAGNETORESISTANCE; OXYGEN-PRESSURE; STRAIN; DIFFRACTION; TRANSITION; DIAGRAM;

D O I：

10.1007/s00339-015-9543-z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomically flat and epitaxial thin films of the electronically phase-separated compound (La0.5Pr0.5)(0.67) Ca0.33MnO3 were grown on as-received and treated (110) NdGaO3 substrates by fine tuning of oxygen pressure during deposition. The optimal conditions were determined using surface morphology, transport, magnetization, and X-ray diffraction measurements. Optimal thin films show step flow growth mode and bulk-like physical properties compared to thin films grown in off-optimal oxygen pressures, viz. the highest maximum temperature coefficient of resistance, the highest peak resistivity temperature, and reduced coercive fields.

引用

页码：1 / 6

页数：6

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