Electrochemical processes and device improvement in conductive bridge RAM cells

被引：55

作者：

Goux, Ludovic ^{[1
]}

Valov, Ilia ^{[2
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Res Ctr Juelich, Elect Mat PGI 7, D-52425 Julich, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2016年 / 213卷 / 02期

关键词：

CBRAM; devices; ECM; memristors; resistive switching; REAL-TIME OBSERVATION; RESISTIVE SWITCHING MEMORIES; DYNAMIC GROWTH/DISSOLUTION; SOLID-ELECTROLYTE; FILAMENT; DISSOLUTION; MECHANISMS; TRANSITION; NUCLEATION; INTERFACES;

D O I：

10.1002/pssa.201532813

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we discuss the recent progress on the fundamental understandings of ECM/CBRAM cells but also on the improved device structures and reliability for high-density applications. The influences of the local chemical environment and the material selection/combination are highlighted, and the filament dynamics is described in a general framework that relates all the reported switching modes. Furthermore we also detail some correlation evidences between the filament shape and device electrical characteristics. Finally, we discuss technological challenges related to current-scaling and cell size-scaling. Large switching variability associated to low current needs to be mitigated by appropriate Write-verify methods, while cell scaling requires novel processing techniques such as Cu dry-etch.

引用

页码：274 / 288

页数：15