All-Inorganic Red-Light Emitting Diodes Based on Silicon Quantum Dots

被引：7

作者：

Ghosh, Batu ^{[1
,2
]}

Shirahata, Naoto ^{[2
,3
,4
]}

机构：

[1] Triveni Devi Bhalotia Coll, Dept Phys, Raniganj 713383, W Bengal, India

[2] NIMS, Int Ctr Mat Nanoarchitecton MANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[3] Hokkaido Univ, Grad Sch Chem Sci & Engn, Sapporo, Hokkaido 0600814, Japan

[4] Chuo Univ, Dept Phys, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, Japan

来源：

CRYSTALS | 2019年 / 9卷 / 08期

基金：

日本科学技术振兴机构;

关键词：

light emitting diode; quantum dots; silicon; solution-process; all-inorganic device; HIGH-EFFICIENCY; LAYER; DEVICES; OXIDE;

D O I：

10.3390/cryst9080385

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report herein an all-inorganic quantum dot light emitting diode (QLED) where an optically active layer of crystalline silicon (Si) is mounted. The prototype Si-QLED has an inverted device architecture of ITO/ZnO/QD/WO3/Al multilayer, which was prepared by a facile solution process. The QLED shows a red electroluminescence, an external quantum efficiency (EQE) of 0.25%, and luminance of 1400 cd/m(2). The device performance stability has been investigated when the device faces different humidity conditions without any encapsulation. The advantage of using all inorganic layers is reflected in stable EQE even after prolonged exposure to harsh conditions.

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页数：9

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