A Novel Helium Ion Microscope for Interconnect Material Imaging

被引：1
|
作者：
Thompson, William [1 ]
Ogawa, Shinichi [2 ]
Stern, Lewis [1 ]
Scipioni, Larry [1 ]
Notte, John [1 ]
机构：
[1] Carl Zeiss SMT, ALIS Div, 1 Corp Way, Peabody, MA 01960 USA
[2] Semiconductor Leading Edge Technol Inc, Back End Proc Program, Tsukuba, Ibaraki 3058569, Japan
来源：
PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2009年
关键词：
D O I：
10.1109/IITC.2009.5090342
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The recently developed helium ion microscope (HIM) can be operated in three imaging modes; ion induced secondary electron (SE) mode, Rutherford Backscatter imaging (RBI) mode, and scanning transmission ion imaging (STIM) mode. When low k dielectric or copper interconnects are imaged in these modes, it was found that unique pattern dimension and fidelity information at sub-nanometer resolution is available for the first time. This paper will discuss the helium ion microscope architecture and the imaging modes that may make it a tool of particular value to the low-k dielectric and dual damascene copper interconnect technology.
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页码：69 / +
页数：2
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