Epitaxial growth of Al-doped β-FeSi2 on Si(111) substrate by reactive deposition epitaxy

被引：1

作者：

Terai, Yoshikazu ^{[1
]}

Hashimoto, Syoutaro ^{[1
]}

Noda, Keiichi ^{[1
]}

Fujiwara, Yasufumi ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Div Mat & Mfg Sci, Suita, Osaka 5650871, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6 | 2009年 / 6卷 / 06期

关键词：

SEMICONDUCTING SILICIDES; TECHNOLOGY; SCIENCE; SI;

D O I：

10.1002/pssc.200881519

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al-doped beta-FeSi(2) [beta-Fe(Si(1-x)Al(x))(2)] thin films with a thickness of 100 nm were epitaxially grown on Si(1 1 1) substrate by reactive deposition epitaxy (R-DE). The reflective high-energy electron diffraction (RHEED) images showed epitaxial growth of beta-Fe(Si(1-x)Al(x))(2) (1 0 1)(1 1 0)//Si(1 1 1) in the composition range of 0 < x < 2.3 In high-resolution X-ray diffraction (HRXRD) measurements, the beta(800) and beta(406)(460) peaks shift to lower diffraction angles. The peak shifts linearly increase with Al composition. From an analysis of the peak shifts, Vegard's law of a, b, and c-axis in Al-doped beta-FeSi(2) was proven for the investigated Al-composition range. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1488 / 1491

页数：4

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