Geometry-Based Tunability Enhancement of Flexible Thin-Film Varactors

被引:3
|
作者
Knobelspies, S. [1 ]
Gonnelli, C. [1 ]
Vogt, C. [1 ]
Daus, A. [1 ]
Muenzenrieder, N. [1 ,2 ]
Troester, Gerhard [1 ]
机构
[1] Swiss Fed Inst Technol Zurich, Inst Elect, CH-8092 Zurich, Switzerland
[2] Univ Sussex, Sch Engn & Informat, Sensor Technol Res Ctr, Brighton BN1 9QT, E Sussex, England
基金
瑞士国家科学基金会;
关键词
Varactor; indium-gallium-zinc-oxide (IGZO); flexible electronics; thin-film technology; MOS; TRANSISTORS; FABRICATION;
D O I
10.1109/LED.2017.2718626
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, flexible voltage-controlledcapacitors (varactors) based on an amorphous Indium-Gallium-Zinc- Oxide (a-IGZO) semiconductor are presented. Two different varactor designs and their influence on the capacitance tuning characteristics are investigated. The first design consists of a top electrode finger structure which yields a maximum capacitance tunability of 6.9 at 10 kHz. Second, a novel interdigitated varactor structure results in a maximum tunability of 93.7 at 100 kHz. The design and frequency-dependencies of the devices are evaluated through C-V measurements. Furthermore, we show bending stability of the devices down to a tensile radius of 6mm without altering the performance. Finally, a varactor is combined with a thin-film resistor to demonstrate a tunable RC-circuit for impedance matching and low-pass filtering applications. The device fabrication flow and material stack are compatible with standard flexible thin-film transistor fabrication which enables parallel implementation of analog or logic circuitry and varactor devices.
引用
收藏
页码:1117 / 1120
页数:4
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