A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode

被引：35

作者：

Wei, H ^{[1
]}

Xia, FN ^{[1
]}

Forrest, SR ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Ctr Photon & Optoelect Mat, Princeton, NJ 08544 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 11期

关键词：

twin-waveguide; waveguide avalanche photodiode;

D O I：

10.1109/LPT.2002.803894

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors demonstrate an integratable high-responsivity high-bandwidth long wavelength InGaAs-InP-InAlAs avalanche photodiode based on an asymmetric twin-waveguide structure. The device has an external quantum efficiency of 48 +/- 1.5% at lambda = 1.55 mum, a 3-dB bandwidth of 28.5 +/- 0.5 GHz with gain of up to 4, and a fiber-to-waveguide misalignment tolerance of +/-1.0 mum in the vertical and +/-1.3 mum in the horizontal directions resulting in a 1-dB sensitivity penalty.

引用

页码：1590 / 1592

页数：3

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