Reverse Bias Leakage Current Mechanism of AlGaN/InGaN/GaN Heterostructure

被引：11

作者：

Chakraborty, Apurba ^{[1
]}

Ghosh, Saptarsi ^{[2
]}

Mukhopadhyay, Partha ^{[2
]}

Jana, Sanjay K. ^{[2
]}

Dinara, Syed Mukulika ^{[2
]}

Bag, Ankush ^{[2
]}

Mahata, Mihir K. ^{[2
]}

Kumar, Rahul ^{[2
]}

Das, Subhashis ^{[2
]}

Das, Palash ^{[2
]}

Biswas, Dhrubes ^{[1
,2
]}

机构：

[1] Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India

[2] Indian Inst Technol, Adv Technol Dev Ctr, Kharagpur 721302, W Bengal, India

来源：

ELECTRONIC MATERIALS LETTERS | 2016年 / 12卷 / 02期

关键词：

HEMT; PA-MBE; reverse bias leakage current; FP emission; FN tunnelling; MOLECULAR-BEAM EPITAXY; GATE LEAKAGE; ALGAN/GAN; GAN;

D O I：

10.1007/s13391-015-5249-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure is investigated by current-voltage measurement in temperature range from 298 K to 423 K. The Higher electric field across the AlGaN barrier layer of AlGaN/InGaN/GaN double heterostructure due to higher polarization charge is found to be responsible for strong Fowler-Nordheim (FN) tunnelling in the electric field higher than 3.66 MV/cm. For electric field less than 3.56 MV/cm, the reverse bias leakage current is also found to follow the trap assisted Frenkel-Poole (FP) emission in low negative bias region. Analysis of reverse FP emission yielded the barrier height of trap energy level of 0.34 eV with respect to Fermi level.

引用

页码：232 / 236

页数：5

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