The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis

被引：21

作者：

O'Leary, Stephen K. ^{[3
]}

Foutz, Brian E. ^{[1
]}

Shur, Michael S. ^{[2
]}

Eastman, Lester F. ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[3] Univ Windsor, Dept Elect & Comp Engn, Windsor, ON N9B 3P4, Canada

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2010年 / 21卷 / 03期

基金：

加拿大自然科学与工程研究理事会;

关键词：

III-V NITRIDE; BAND-GAP; GALLIUM ARSENIDE; INN; SEMICONDUCTORS; PROGRESS; GROWTH; ENERGY; ALN;

D O I：

10.1007/s10854-009-9896-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk wurtzite InN using a revised set of material parameters, this revised set of parameters taking into account recently observed InN phenomenology. In particular, we examine how the steady-state and transient electron transport that occurs within bulk wurtzite InN changes in response to variations in the crystal temperature and the doping concentration. The sensitivity of these results to variations in the non-parabolicity coefficient is also examined.

引用

页码：218 / 230

页数：13

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