Vacancy diffusion in the Cu(001) surface II: Random walk theory

被引:26
作者
Somfai, E
van Gastel, R
van Albada, SB
van Saarloos, W
Frenken, JWM
机构
[1] Leiden Univ, Inst Lorentz, NL-2300 RA Leiden, Netherlands
[2] Leiden Univ, Kamerlingh Onnes Lab, NL-2300 RA Leiden, Netherlands
关键词
surface diffusion; copper; indium;
D O I
10.1016/S0039-6028(02)02251-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We develop a version of the vacancy mediated tracer diffusion model, which follows the properties of the physical system of In atoms diffusing within the top layer of Cu(001) terraces. This model differs from the classical tracer diffusion problem in that (i) the lattice is finite, (ii) the boundary is a trap for the vacancy, and (iii) the diffusion rate of the vacancy is different, in our case strongly enhanced, in the neighborhood of the tracer atom. A simple continuum solution is formulated for this problem, which together with the numerical solution of the discrete model compares well with our experimental results. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:26 / 33
页数:8
相关论文
共 10 条