Optical characterization of MoS2 sputtered thin films

被引：4

作者：

Hasuike, N. ^{[1
]}

Yamauchi, S. ^{[1
]}

Seki, K. ^{[1
]}

Kamoi, S. ^{[2
]}

Nishio, K. ^{[1
]}

Kisoda, K. ^{[3
]}

机构：

[1] Kyoto Inst Technol, Dept Elect, Sakyo Ku, Kyoto 6068585, Japan

[2] Kyoto Prefectural Technol Ctr, Shimogyo Ku, Chudoji Minami Cho, Kyoto 6008813, Japan

[3] Wakayama Univ, Dept Phys, Wakayama 6408510, Japan

来源：

12TH INTERNATIONAL CONFERENCE ON EXCITONIC AND PHOTONIC PROCESSES IN CONDENSED MATTER AND NANO MATERIALS (EXCON 2018) | 2019年 / 1220卷

关键词：

RAMAN; PHOTOLUMINESCENCE; MONOLAYER; LAYERS;

D O I：

10.1088/1742-6596/1220/1/012057

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We studied on the crystallinity of as-sputtered and annealed MoS2 thin films by Raman scattering. The samples were prepared by RF magnetron sputtering, and the thermal annealing was carried out under sulfurous atmosphere. Although as-sputtered MoS2 thin films clearly showed the deterioration of the lattice ordering, it was drastically improved by the thermal annealing due to the sulfurization of the sample. And since the sulfurization occurred remarkably on the top surface of MoS2 sputtered thin films, it was expected to be an effective method to realize a few-layer MoS2 sputtered thin films with high crystallinity.

引用

页数：4

共 17 条

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