Dephasing of excited-state excitons in InGaAs quantum dots

被引:6
|
作者
Borri, P.
Langbein, W.
Muljarov, E. A.
Zimmermann, R.
机构
[1] Cardiff Univ, Sch Biosci, Cardiff CF10 3US, S Glam, Wales
[2] Cardiff Univ, Sch Phys & Astron, Cardiff CF24 3YB, S Glam, Wales
[3] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany
[4] AM Prokhorov Gen Phys Inst RAS, Moscow 119991, Russia
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2006年 / 243卷 / 15期
关键词
D O I
10.1002/pssb.200671516
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We measure the dephasing time of the first optically-active excited-state excitonic transition in strongly confined InGaAs quantum dots using transient four-wave mixing. The optically-driven excited-state polarization shows a bi-exponential decay with a significant fraction of the probed excited states exhibiting a very long dephasing time, in the nanosecond range at 10 K. The full time-dependent four-wave mixing polarization is microscopically calculated by taking into account both virtual and real acoustic phonon-assisted transitions. The bi-exponential decay is qualitatively explained by a model of two-bright excitonic excited states non-degenerate in the absence of in-plane cylindrical symmetry. (C) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:3890 / 3894
页数:5
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