Electron field emission from silicon tip arrays coated by magnetron sputtering carbon nitride film

被引：6
|
作者：
Li, JJ
Zheng, WT
Gu, CZ
Jin, ZS
机构：
[1] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
[2] Jilin Univ, State Key Lab Surperhard Mat, Dept Mat Sci, Changchun 130023, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2004年 / 132卷 / 3-4期
基金：
中国国家自然科学基金;
关键词：
Si tips array; electron field emission;
D O I：
10.1016/j.ssc.2004.07.036
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The field emission properties of silicon tip arrays coated by magnetron sputtering carbon nitride films (CNx) were investigated. The coated Si tip arrays with the height of 3 mum and the density of 106 tips/cm(2) exhibit good field emission properties with the lowest threshold field of 2V/mum, which is much better than that of uncoated Si tip arrays. The results demonstrate that CNx films effectively lower a surface potential barrier to improve the electron field emission properties of silicon tips. In particular, it was found that the variation of deposition conditions of CNx films coated on the Si tips had a significant influence on the field emission property of Si tip arrays. The dc substrate bias could reduce the field emission property of silicon tips, but a higher nitrogen partial pressure and moderate input power are favorable to the enhancement of the field emission property of Si tips. The effects of deposition conditions on the electron field emission are attributed to the change Of sp(2) C-N bonds content in the CNx films and the apex shape of Si tip. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：253 / 257
页数：5
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