High-speed atomic force microscopy studies of 193-nm immersion photoresists during tetramethylammonium hydroxide development

被引：2

作者：

Ngunjiri, Johnpeter ^{[1
]}

Meyers, Gregory ^{[2
]}

Cameron, Jim ^{[3
]}

Suzuki, Yasuhiro ^{[4
]}

Jeon, Hyun ^{[4
]}

Lee, Dave ^{[4
]}

Choi, Kwang Mo ^{[4
]}

Kim, Jung Woo ^{[4
]}

Im, Kwang-Hwyi ^{[4
]}

Lim, Hae-Jin ^{[4
]}

机构：

[1] Dow Analyt Sci, Collegeville, PA USA

[2] Dow Analyt Sci, Midland, MI USA

[3] Dow Elect Mat, Marlborough, MA USA

[4] Rohm & Haas Elect Mat Korea Ltd, Hwaseong, Gyeonggi Do, South Korea

来源：

JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2018年 / 17卷 / 02期

关键词：

high-speed atomic force microscopy; photoresist; immersion; 193; nm; dissolution; swelling; LITHOGRAPHY; RESISTS;

D O I：

10.1117/1.JMM.17.2.023506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on our studies of the dynamic process of positive tone photoresist development in real time. Using high-speed atomic force microscopy (HS-AFM) in dilute alkaline developer solution, changes in morphology and nanomechanical properties of patterned resist were monitored. The Bruker Dimension FastScan AFM was used to analyze 193-nm acrylic-based immersion resists in tetramethylammonium hydroxide developer solution. HS-AFM operated in PeakForce Tapping((R)) (Registered Trademark of Bruker, Inc.) mode can allow for concurrent measurements of resist topography, stiffness, adhesion, and deformation during development. These studies focused on HS-AFM topography data as it readily revealed detailed information about initial resist morphology, followed by a resist swelling process, and eventual dissolution of the exposed resist areas. HS-AFM showed potential for tracking and understanding development of patterned resist films and can be useful in evaluating the dissolution properties of different resist designs. Also discussed are the roles of AFM tip shape and resist feature geometry on the measured line edge roughness using a simulation procedure. (C) 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)

引用

页数：14

共 26 条

[1] Photoresists for 193-nm lithography [J].