Covalent Attachment of Alkyl Functionality to 50 nm Silicon Nanowires through a Chlorination/Alkylation Process

被引:53
作者
Bashouti, Muhammad Y. [1 ,2 ]
Stelzner, Thomas [3 ]
Christiansen, Silke [3 ,4 ]
Haick, Hossam [1 ,2 ]
机构
[1] Technion Israel Inst Technol, Dept Chem Engn, IL-32000 Haifa, Israel
[2] Technion Israel Inst Technol, Russell Berrie Nanotechnol Inst, IL-32000 Haifa, Israel
[3] Inst Photon Technol EV, D-07745 Jena, Germany
[4] Max Planck Inst Mikrostruct Phys, D-06120 Halle, Germany
关键词
SELF-ASSEMBLED MONOLAYERS; ORGANIC MONOLAYERS; CHEMICAL-STABILITY; SI(111) SURFACES; REACTING SI; PASSIVATION; CHEMISTRY; PHOTOEMISSION; 1-ALKENES; TRANSPORT;
D O I
10.1021/jp905394w
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
For many applications, the presence of oxide on Si nanowires (Si NWs) is undesirable because of the difficulty in controlling the SiO2/Si interface properties. Here, we report on the functionalization of 50 nm (in diameter) Si NWs with alkyl chains using a versatile two step chlorination/alkylation process, while preserving the original length and diameter of the NWs. We show that Si NWs terminated with C-1-C-10 molecules, through Si-C bonds, connect alkyl molecules to 50-100% of the Si atop sites and provide Surface stability that depends on the chain length and molecular coverage. These observation were explained by noting that the longer the alkyl chain the higher the concentration of molecule-free pinholes on the Si NW surfaces and, therefore, the easier the oxidation process. Our results provide evidence that alkyl-Si NWs provide stronger Si-C bonds and higher surface stability in ambient conditions than equivalent two-dimensional (2D) Si surfaces having similar or higher initial coverage. The kinetic mechanism of the alkylation process of Si NW surfaces. the oxidation resistance of the modified structures, and the differences from 2D Surfaces are discussed in the article.
引用
收藏
页码:14823 / 14828
页数:6
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