Very low pressure nucleation of diamond on mirror-smooth silicon in hot filament chemical vapor deposition system

被引：3
|
作者：
Lin, ZD [1 ]
Chen, Y [1 ]
Chen, QJ [1 ]
Lee, ST [1 ]
Lam, YW [1 ]
机构：
[1] CITY UNIV HONG KONG,DEPT PHYS & MAT SCI,KOWLOON,HONG KONG
来源：
CHINESE PHYSICS LETTERS | 1996年 / 13卷 / 10期
关键词：
D O I：
10.1088/0256-307X/13/10/011
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Under very low pressure (0.1 Torr) the high density nucleation of diamond on mirror-smooth silicon in hot filament-chemical vapor deposition system was obtained. The nucleation density of order of 10(10)-10(11) cm(-2) was achieved, the same achievement which obtained ill microwave plasma-chemical vapor deposition system with negative bias. In this paper the nucleation technique and the effect of low pressure on diamond nucleation were discussed in detail based on the molecular dynamics.
引用
收藏
页码：753 / 756
页数：4
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