Effect of contact geometry on 4H-SiC rectifiers with junction termination extension

被引：4

作者：

Nigam, S

Kim, J

Luo, B

Ren, F

Chung, GY

Pearton, SJ

Williams, JR

Shenai, K

Neudeck, P

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Sterling Semicond, Tampa, FL 33619 USA

[3] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA

[4] Univ Illinois, Dept Elect & Comp Engn, Chicago, IL 60607 USA

[5] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[6] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0038-1101(02)00273-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiC rectifiers with an on/off current ratio of 4 x 10(5) (at 1.5 V/-500 V) were fabricated using junction termination extension (JTE) and dielectric overlap. The reverse breakdown voltage was inversely dependent on contact area and was not a strong function of JTE length up to 40 mum. Similarly, for a given JTE length, the metal overlap did not have a strong influence on breakdown voltage. Oval- and circular-shaped contacts produced larger breakdown voltages than square rectifying contacts. The on-state resistance, R-ON, was 4.2 mOmega cm(2), which is close to the theoretical minimum of these rectifiers using Ni Schottky contacts. The figure-of-merit (V-B)(2)/R-ON was as high as 156 MW cm(-2). (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：57 / 60

页数：4

共 21 条

[1] SiC device edge termination using finite area argon implantation [J].