Coulomb blockade in anodised titanium nanostructures

被引：4

作者：

Johannson, J ^{[1
]}

Schöllmann, V ^{[1
]}

Andersson, K ^{[1
]}

Haviland, DB ^{[1
]}

机构：

[1] Royal Inst Technol, KTH, S-10024 Stockholm, Sweden

来源：

PHYSICA B | 2000年 / 284卷

关键词：

anodic oxidation; Coulomb blockade; single electronics;

D O I：

10.1016/S0921-4526(99)02984-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigate the electrical transport properties of narrow titanium (Ti) wires which are thinned by anodic oxidation. At temperatures below 1 K the current-voltage (IV) characteristics of the resulting Ti/TiOx nanostructures exhibit a zero current state due to the occurrence of Coulomb blockade. An indium gate electrode is placed on top of the anodised region, and the modulation of the conductance as a function of the gate voltage is investigated. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

引用

页码：1796 / 1797

页数：2

共 3 条

[1]

Grabert H., 1992, Single Charge Tunneling

[2] Coulomb blockade effects in anodized niobium nanostructures [J].