Artificial control of optical gain polarization by stacking quantum dot layers

被引：72
作者：
Kita, T.
Tamura, N.
Wada, O.
Sugawara, M.
Nakata, Y.
Ebe, H.
Arakawa, Y.
机构：
[1] Kobe Univ, Dept Elect & Elect Engn, Fac Engn, Kobe, Hyogo 6578501, Japan
[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
[3] Univ Tokyo, Res Ctr Adv Sci & Technol, Tokyo 1538505, Japan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 21期
关键词：
D O I：
10.1063/1.2206126
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Polarization insensitivity of InAs/GaAs quantum dot (QD) optical amplifier has been demonstrated by controlling the dot shape. The height of the QD has been controlled by stacking closely InAs islands to form a columnar QD. Room-temperature polarized amplified spontaneous emission from the columnar QDs has been investigated by using variable stripe-length method. With increasing the aspect ratio, transverse-magnetic-mode-dominant optical gain has been achieved. We obtained almost polarization insensitive optical gain for QDs with seven stacking layers. (c) 2006 American Institute of Physics.
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页数：3
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共 13 条
  • [1] Exploitation of optical interconnects in future server architectures
    Benner, AF
    Ignatowski, M
    Kash, JA
    Kuchta, DM
    Ritter, MB
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2005, 49 (4-5) : 755 - 775
  • [2] 1.5-MU-M BAND TRAVELING-WAVE SEMICONDUCTOR OPTICAL AMPLIFIERS WITH WINDOW FACET STRUCTURE
    CHA, I
    KITAMURA, M
    HONMOU, H
    MITO, I
    [J]. ELECTRONICS LETTERS, 1989, 25 (18) : 1241 - 1242
  • [3] GROSSKOPF G, 1987, ELECTRON LETT, V23, P1387, DOI 10.1049/el:19870957
  • [4] POLARIZATION INSENSITIVE SEMICONDUCTOR-LASER AMPLIFIERS WITH TENSILE STRAINED INGAASP/INGAASP MULTIPLE QUANTUM-WELL STRUCTURE
    JOMA, M
    HORIKAWA, H
    XU, CQ
    YAMADA, K
    KATOH, Y
    KAMIJOH, T
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (02) : 121 - 122
  • [5] Kita T, 2002, JPN J APPL PHYS 2, V41, pL1143, DOI 10.1143/JJAP.4l.L1143
  • [6] Polarization-insensitive quantum-well semiconductor optical amplifiers
    Koonath, P
    Kim, S
    Cho, WJ
    Gopinath, A
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (09) : 1282 - 1290
  • [7] 1.55 MU-M POLARIZATION-INSENSITIVE HIGH-GAIN TENSILE-STRAINED-BARRIER MQW OPTICAL AMPLIFIER
    MAGARI, K
    OKAMOTO, M
    NOGUCHI, Y
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (11) : 998 - 1000
  • [8] Nakata Y, 1999, INST PHYS CONF SER, P427
  • [9] Laser action in Eu-doped GaN thin-film cavity at room temperature
    Park, JH
    Steckl, AJ
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (20) : 4588 - 4590
  • [10] Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6 nm
    Saito, T
    Nakaoka, T
    Kakitsuka, T
    Yoshikuni, Y
    Arakawa, Y
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4) : 217 - 221
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