Tuning the strain-induced resonance shift in silicon racetrack resonators by their orientation

被引：7

作者：

Castellan, Claudio ^{[1
]}

Chalyan, Astghik ^{[1
,2
]}

Mancinelli, Mattia ^{[1
,3
]}

Guilleme, Pierre ^{[1
]}

Borghi, Massimo ^{[1
]}

Bosia, Federico ^{[4
,5
]}

Pugno, Nicola M. ^{[6
,7
,8
]}

Bernard, Martino ^{[9
]}

Ghulinyan, Mher ^{[9
]}

Pucker, Georg ^{[9
]}

Pavesi, Lorenzo ^{[1
]}

机构：

[1] Univ Trento, Dept Phys, Nanosci Lab, Via Sommarive 14, I-38123 Trento, Italy

[2] Russian Armenian Slavonic Univ, H Emin 123, Yerevan 0051, Armenia

[3] SM Opt Srl, Res Programs, Via John Fitzgerald Kennedy 2, I-20871 Vimercate, Italy

[4] Univ Turin, Dept Phys, Via Pietro Giuria 1, I-10125 Turin, Italy

[5] Univ Turin, Nanostruct Interfaces & Surfaces Ctr, Via Pietro Giuria 1, I-10125 Turin, Italy

[6] Univ Trento, Lab Bioinspired & Graphene Nanomech, Dept Civil Environm & Mech Engn, Via Mesiano 77, I-38123 Trento, Italy

[7] Queen Mary Univ London, Sch Engn & Mat Sci, Mile End Rd, London E1 4NS, England

[8] Italian Space Agcy, Edoardo Amaldi Fdn, Ket Lab, Via Politecn Snc, I-00133 Rome, Italy

[9] Fdn Bruno Kessler, Ctr Mat & Microsyst, Via Sommarive 18, I-38123 Trento, Italy

来源：

OPTICS EXPRESS | 2018年 / 26卷 / 04期

基金：

欧盟地平线“2020”;

关键词：

PHOTONIC DEVICES; WAVE-GUIDES;

D O I：

10.1364/OE.26.004204

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work, we analyze the role of strain on a set of silicon racetrack resonators presenting different orientations with respect to the applied strain. The strain induces a variation of the resonance wavelength, caused by the photoelastic variation of the material refractive index as well as by the mechanical deformation of the device. In particular, the mechanical deformation alters both the resonator perimeter and the waveguide cross-section. Finite element simulations taking into account all these effects are presented, providing good agreement with experimental results. By studying the role of the resonator orientation we identify interesting features, such as the tuning of the resonance shift from negative to positive values and the possibility of realizing strain insensitive devices. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：4204 / 4218

页数：15

共 24 条

[1] Photoelastic effect in silicon ring resonators [J].