Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

被引:69
作者
Hallam, Brett [1 ]
Herguth, Axel [2 ]
Hamer, Phillip [1 ,3 ]
Nampalli, Nitin [1 ,4 ]
Wilking, Svenja
Abbott, Malcolm [1 ,2 ]
Wenham, Stuart [1 ]
Hahn, Giso [2 ]
机构
[1] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia
[2] Univ Konstanz, Dept Phys, Univ Str 10, D-78457 Constance, Germany
[3] Univ Oxford, Dept Mat, 16 Parks Rd, Oxford OX1 3PH, England
[4] Aalto Univ, Dept Elect & Nanoengn, Tiototie 3, FIN-02150 Espoo, Finland
来源
APPLIED SCIENCES-BASEL | 2018年 / 8卷 / 01期
基金
澳大利亚研究理事会; 英国工程与自然科学研究理事会;
关键词
boron-oxygen; light-induced degradation; p-type Czochralski; silicon solar cell; regeneration; hydrogen passivation; BORON-OXYGEN DEFECT; CAST MULTICRYSTALLINE SILICON; MINORITY-CARRIER LIFETIME; SINGLE-CRYSTAL SILICON; N-TYPE; PERMANENT DEACTIVATION; RECOMBINATION CENTERS; BO-REGENERATION; HYDROGEN DIFFUSION; FORMATION RATES;
D O I
10.3390/app8010010
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.
引用
收藏
页数:19
相关论文
共 149 条
[1]  
[Anonymous], 2017, International Technology Roadmap for Photovoltaics: Fifth Edition
[2]   Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells [J].
Arafune, K ;
Sasakia, T ;
Wakabayashi, F ;
Terada, Y ;
Ohshita, Y ;
Yamaguchi, M .
PHYSICA B-CONDENSED MATTER, 2006, 376 :236-239
[3]   Electronically activated boron-oxygen-related recombination centers in crystalline silicon [J].
Bothe, K ;
Schmidt, J .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (01)
[4]   Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon [J].
Bothe, K ;
Sinton, R ;
Schmidt, J .
PROGRESS IN PHOTOVOLTAICS, 2005, 13 (04) :287-296
[5]   Effective reduction of the metastable defect concentration in boron-doped Czochralski silicon for solar cells [J].
Bothe, K ;
Schmidt, J ;
Hezel, R .
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, :194-197
[6]   Transition metals in photovoltaic-grade ingot-cast multicrystalline silicon: Assessing the role of impurities in silicon nitride crucible lining material [J].
Buonassisi, T ;
Istratov, AA ;
Pickett, MD ;
Rakotoniaina, JP ;
Breitenstein, O ;
Marcus, MA ;
Heald, SM ;
Weber, ER .
JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) :402-407
[7]  
Colville F., 2016, P OR PRES PVCELLTECH
[8]   GENERATION 3: IMPROVED PERFORMANCE AT LOWER COST [J].
Cousins, Peter J. ;
Smith, David D. ;
Luan, Hsin-Chiao ;
Manning, Jane ;
Dennis, Tim D. ;
Waldhauer, Ann ;
Wilson, Karen E. ;
Harley, Gabriel ;
Mulligan, William P. .
35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, :275-278
[9]  
Dubois S., 2012, 27th European Photovoltaic Solar Energy Conference and Exhibition. Proceedings, P749
[10]   Hydrogen in C-rich Si and the diffusion of vacancy-H complexes [J].
Estreicher, S. K. ;
Docaj, A. ;
Bebek, M. B. ;
Backlund, D. J. ;
Stavola, M. .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (10) :1872-1879