Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

被引：310

作者：

Onuma, T. ^{[1
,2
,3
]}

Fujioka, S. ^{[2
]}

Yamaguchi, T. ^{[2
]}

Higashiwaki, M. ^{[3
]}

Sasaki, K. ^{[3
,4
]}

Masui, T. ^{[5
]}

Honda, T. ^{[2
]}

机构：

[1] Tokyo Natl Coll Technol, Dept Liberal Arts, Hachioji, Tokyo 1930997, Japan

[2] Kogakuin Univ, Grad Sch Engn, Dept Elect Engn & Elect, Hachioji, Tokyo 1920015, Japan

[3] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

[4] Tamura Corp, Sayama, Saitama 3501328, Japan

[5] Koha Co Ltd, Tokyo 1760022, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 04期

关键词：

ELECTRONIC-STRUCTURE; CATHODOLUMINESCENCE; ABSORPTION;

D O I：

10.1063/1.4816759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature-dependent cathodoluminescence spectra were measured from (001) unintentionally doped, (100) Si-doped, and (010) Mg-doped beta-Ga2O3 substrates prepared by either the floating zone growth or edge-defined film-fed growth methods. Although beta-Ga2O3 is expected to be an indirect bandgap material, direct Gamma-Gamma transitions were found to be dominant in the optical transmittance spectra. The substrates exhibited no near-band-edge emission and instead exhibited ultraviolet luminescence, blue luminescence (BL), and green luminescence bands. Since the BL intensity strongly depended on the resistivity in the crystals, there was evidence of a correlation between the BL intensity and formation energy of oxygen vacancies. (C) 2013 AIP Publishing LLC.

引用

页数：3

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