Controlled polarization switching in VCSELs by means of asymmetric current injection

被引:31
作者
Augustin, LM
Smalbrugge, E
Choquette, KD
Karouta, F
Strijbos, RC
Verschaffelt, G
Geluk, EJ
van de Roer, TG
Thienpont, H
机构
[1] Eindhoven Univ Technol, COBRA Interuniv Res Inst, Grp Optoelect Devices EH8, NL-5600 MB Eindhoven, Netherlands
[2] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA
[3] Free Univ Brussels, B-1050 Brussels, Belgium
关键词
asymmetric current injection; distributed feedback lasers; GaAs; intracavity contacts; polarization control; polarization switching; semiconductor lasers;
D O I
10.1109/LPT.2004.823693
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have investigated the potential of asymmetric current injection for polarization switching in GaAs-based intracavity contacted vertical-cavity surface-emitting lasers using two sets of p- and n-type contacts per device. When using the contacts aligned along the [1101 crystal direction, the observed laser polarization is parallel to [1101, whereas, using the contacts along the [1101 crystal direction, the polarization of the laser emission switches to a direction making an angle of 25degrees-90 towards [110]. To overcome this peculiar result, a careful design of the contact layers in the intracavity structure is required.
引用
收藏
页码:708 / 710
页数:3
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