Memristor-based memory: The sneak paths problem and solutions

被引：317
|
作者：
Zidan, Mohammed Affan [1 ]
Fahmy, Hossam Aly Hassan [2 ]
Hussain, Muhammad Mustafa [1 ]
Salama, Khaled Nabil [1 ]
机构：
[1] KAUST, Thuwal 239556900, Saudi Arabia
[2] Cairo Univ, Fac Engn, Elect & Commun Dept, Cairo, Egypt
来源：
MICROELECTRONICS JOURNAL | 2013年 / 44卷 / 02期
关键词：
Nanotechnology; Memory; Memory array; Memristor; Sneak paths; MODEL; CIRCUITS;
D O I：
10.1016/j.mejo.2012.10.001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we investigate the read operation of memristor-based memories. We analyze the sneak paths problem and provide a noise margin metric to compare the various solutions proposed in the literature. We also analyze the power consumption associated with these solutions. Moreover, we study the effect of the aspect ratio of the memory array on the sneak paths. Finally, we introduce a new technique for solving the sneak paths problem by gating the memory cell using a three-terminal memistor device. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：176 / 183
页数：8
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