Transport properties of two-dimensional electron gases in Ga[Al]As heterostructures containing InAs self-assembled quantum dots

被引：8

作者：

Ribeiro, E ^{[1
]}

Jäggi, R

Heinzel, T

Ensslin, K

Medeiros-Ribeiro, TG

Petroff, PM

机构：

[1] ETH Zurich, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 47卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00152-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have performed transport experiments on two-dimensional electron gases in a GaAsAl0.3Ga0.7As heterostructure containing InAs self-assembled quantum dots in close proximity to the heterointerface. We find that the dots act as repulsive scatterers and dominate the mobility. In the samples with the highest dot density, we find a metal-insulator transition, which differs from such transitions in other samples in several respects.

引用

页码：73 / 75

页数：3

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